TID Response of pMOS Nanowire Field-Effect Transistors: Geometry and Bias Dependence

The total ionizing dose (TID) response of pMOS nanowire field-effect transistors (NWFETs) is investigated using X-ray irradiations. The TID-induced voltage shift is studied using two NWFET widths and four bias configurations. Both the impact of the geometry and the influence of the bias configuratio...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 65; no. 8; pp. 1525 - 1531
Main Authors Riffaud, J., Gaillardin, M., Marcandella, C., Richard, N., Duhamel, O., Martinez, M., Raine, M., Paillet, P., Lagutere, T., Andrieu, F., Barraud, S., Vinet, M., Faynot, O.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bias
Configurations
Dependence
Downsizing
Electrostatics
Field effect transistors
Fin field-effect transistors (FinFETs)
Geometry
geometry dependence
Induced voltage
Irradiation
Logic gates
Metal oxide semiconductors
MOS devices
MOSFET
multiple gates
Nanotechnology
nanowire
Nanowires
Radiation
Radiation effects
Semiconductor devices
silicon on insulator (SOI)
Threshold voltage
total ionizing dose (TID) response
Transistors
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Summary:The total ionizing dose (TID) response of pMOS nanowire field-effect transistors (NWFETs) is investigated using X-ray irradiations. The TID-induced voltage shift is studied using two NWFET widths and four bias configurations. Both the impact of the geometry and the influence of the bias configuration during irradiation on the radiation-induced trapped charges into the buried oxide are thus addressed. The impact of gate length downsizing on the NWFET's electrical characteristics in several bias configurations is studied and compared to one of the nMOS NWFETs to state on the mechanisms which leads to their TID response.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2018.2850531