Hybrid Plasmonic Ring-Resonator Uni-Traveling Carrier Pin-Photodetector on InGaAsP/InP Layer Stack

In this article, for the first time, a hybrid plasmonic (HP) ring resonator uni-traveling carrier pin-photodetector was numerically presented that offers a high responsivity of 0.68 A/W, a high bandwidth of over 125 GHz, and low footprint. This device has the capability of monolithic integration wit...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 67; no. 8; pp. 3221 - 3228
Main Authors Rostami-Khomami, Ali, Nikoufard, Mahmoud
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Absorption
Gallium indium arsenide phosphide
Hybrid plasmonic (HP) waveguide
III-V semiconductor materials
Indium gallium arsenide
Indium phosphide
Indium phosphides
InGaAsP materials
nanophotonics
Optical communication
Optical ring resonators
Photometers
Plasmonics
Plasmons
Resonators
ring resonator
uni-traveling carrier pin-photodetector (UTC-pin-PD)
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Summary:In this article, for the first time, a hybrid plasmonic (HP) ring resonator uni-traveling carrier pin-photodetector was numerically presented that offers a high responsivity of 0.68 A/W, a high bandwidth of over 125 GHz, and low footprint. This device has the capability of monolithic integration with HP-passive devices on the InP platform at an optical communication wavelength of 1550 nm.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.3000848