A Simple Method to Create Corners for the Lookup Table-Based MOSFET Models Through Inputs and Outputs Mapping

This article presents a simple method to create corner models to capture process variations for the lookup table-based MOSFET models through inputs and outputs mapping. The electrical specifications, including the threshold voltage, peak transconductance, ON-state resistance, saturation current, and...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 68; no. 4; pp. 1432 - 1438
Main Author Xia, Kejun
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
FinFETs
Integrated circuit modeling
Logic gates
lookup table (LUT) model
Lookup tables
Mapping
Mathematical model
MOSFETs
Resistance
Semiconductor device measurement
semiconductor device modeling
SPICE
Table lookup
Threshold voltage
Transconductance
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Summary:This article presents a simple method to create corner models to capture process variations for the lookup table-based MOSFET models through inputs and outputs mapping. The electrical specifications, including the threshold voltage, peak transconductance, ON-state resistance, saturation current, and gate oxide thickness, can be fitted through five model parameters. The effectiveness of the method is demonstrated by both the FinFET model BSIM-CMG and the planar MOSFET measurement data.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3059191