Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor

• Published in: Solid-state electronics Vol. 49; no. 6; pp. 956 - 964
• Main Authors: Maneux, C., Belhaj, M., Grandchamp, B., Labat, N., Touboul, A.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.06.2005; Elsevier Science; Elsevier
• Subjects: Applied sciences; Electronics; Engineering Sciences; Exact sciences and technology; GaAs0.51Sb0.49 material; HBT; Micro and nanotechnologies; Microelectronics; Physical simulation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; 85.30.Pq; GaAs0.51Sb0.49 material; HBT; Physical simulation; 81.05.Ea; Ternary compound; Binary compound; Gallium arsenides; Minority carrier; Electron-hole recombination; Gallium antimonides; High density; Two dimensional model; Indium phosphide; Energy gap; Direct current; Carrier lifetime; 85.30.Pq HBT; Heterojunction bipolar transistors; Reliability; Current density; Electrical characteristic
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2005.03.007

This work describes a procedure to implement a two-dimensional hydrodynamic simulation of InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistor (DHBT). It concerns the DC characteristics and allows to fit some very sensitive but still unknown or uncertain parameters of GaAs0.51Sb0.49 material, such as the band gap energy and the minority carrier lifetime. In particular, the influence of the band gap narrowing on the DHBT DC operation is analyzed. Thereafter, the mechanisms of electron–hole recombination into GaAs0.51Sb0.49 are discussed and a typical value of the electron lifetime is calculated. Finally, the drop of DHBT performances at high collector current densities is highlighted.