The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits

• Published in: IEEE transactions on nuclear science Vol. 62; no. 6; pp. 2599 - 2605
• Main Authors: Jung Seungwoo, Ickhyun Song, Fleetwood, Zachary E., Raghunathan, Uppili, Lourenco, Nelson E., Oakley, Michael A., Wier, Brian R., Roche, Nicolas J-H, Khachatrian, Ani, McMorrow, Dale, Buchner, Stephen P., Warner, Jeffrey H., Paki, Pauline, Cressler, John D.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2015; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: BiCMOS integrated circuits; Current mirrors; Heterojunction bipolar transistors; Mirrors; Negative feedback; radiation hardening; Radiation hardening (electronics); SiGe BiCMOS HBT; Silicon germanium; Single event transients; single-event; single-event transient; Transient analysis; Wilson current mirror
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2015.2498540

The effects of negative feedback, both external and internal, on single event transients (SETs) in SiGe HBT analog circuits are investigated. In order to examine internal negative feedback effects, basic common-emitter NPN current mirrors, with and without emitter degeneration resistors, are utilized. A Wilson current mirror and a Wilson mirror with its intrinsic external feedback removed are used to study external negative feedback effects under the influence of laser-induced single events. The measurement data clearly show notable improvements in SET response that can be made by employing both internal and external negative feedback. The peak transient in the output current is reduced, and the settling time upon a laser strike is shortened significantly by negative feedback. All four investigated current mirrors were fabricated with IBM 8HP 130 nm SiGe BiCMOS technology.