Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID

Recently, Shu et al. published "Numerical and Experimental Investigation of TID Radiation Effect on the Breakdown Voltage of 400 V SOI NLDMOS." This short article is an extension of that earlier article. The breakdown voltage of 400-V silicon-on-insulator n-channel laterally diffused metal...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 67; no. 11; pp. 2392 - 2395
Main Authors Shu, Lei, Zhao, Yuan-Fu, Galloway, Kenneth F., Wang, Liang, Wang, Xin-Sheng, Yuan, Zhang-Yi'an, Zhou, Xin, Chen, Wei-Ping, Qiao, Ming, Wang, Tian-Qi
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Breakdown
Breakdown voltage
CAD
Computer aided design
Degradation
Doping
Drift
drift region length
Electric fields
Electric potential
Field effect transistors
Length measurement
Microelectronics
Radiation
Semiconductor devices
silicon-on-insulator (SOI) laterally diffused metal oxide semiconductor field-effect transistors (LDMOSFETs)
SOI (semiconductors)
Technology assessment
technology computer-aided design (TCAD) simulation
total dose
Total ionizing dose
Voltage
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Summary:Recently, Shu et al. published "Numerical and Experimental Investigation of TID Radiation Effect on the Breakdown Voltage of 400 V SOI NLDMOS." This short article is an extension of that earlier article. The breakdown voltage of 400-V silicon-on-insulator n-channel laterally diffused metal-oxide semiconductor field-effect transistors with different drift region lengths are examined after exposure to total ionizing dose. The variation observed is analyzed using technology computer-aided design simulation.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2020.2970743