Complete 3D-Reduced Surface Field Superjunction Lateral Double-Diffused MOSFET Breaking Silicon Limit

• Published in: IEEE electron device letters Vol. 36; no. 12; pp. 1348 - 1350
• Main Authors: Duan, Baoxing, Cao, Zhen, Yuan, Song, Yang, Yintang
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2015; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Breakdown voltage; LDMOS; MOS devices; MOSFET; Resistance; Silicon; Silicon Limit; SIPOS; Super Junction; silicon limit; Super junction; SIPOS; LDMOS

A new superjunction lateral double-diffused MOS with the semi-insulating poly silicon (SIPOS SJ-LDMOS) has been proposed in this letter, for the first time, with the complete three-dimensional reduced surface field (3D-RESURF). The SIPOS SJ-LDMOS along the three dimensions are subject to the electri...