Extremely high Be doped Ga0.47In0.53As growth by chemical beam epitaxy
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Published in | Journal of crystal growth Vol. 105; no. 1-4; pp. 366 - 370 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
01.10.1990
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Online Access | Get full text |
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ISSN: | 0022-0248 |
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DOI: | 10.1016/0022-0248(90)90387-Z |