High-Power InGaN Laser Array With Advanced Lateral-Corrugated Waveguides

Both high-beam-quality and high-power operation of InGaN laser array are realized by lateral-corrugated waveguides (LCWG) with reduced higher-order transverse modes. In our proposed structure, the number of higher-order modes supported by the waveguide and scattered by the LCWG is smaller than that...

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Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 57; no. 6; pp. 1 - 7
Main Authors Hagino, Hiroyuki, Kawaguchi, Masao, Nozaki, Shinichiro, Mochida, Atsunori, Kano, Takashi, Takigawa, Shinichi, Katayama, Takuma, Tanaka, Tsuyoshi
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Beam quality
Corrugated waveguides
InGaN
Laser arrays
Laser modes
Laser processing
Lasers
lateral transverse mode
Optical device fabrication
Optical saturation
Optical scattering
Optical sensors
Optical waveguides
Q factors
Quantum efficiency
waveguide
Waveguide lasers
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Summary:Both high-beam-quality and high-power operation of InGaN laser array are realized by lateral-corrugated waveguides (LCWG) with reduced higher-order transverse modes. In our proposed structure, the number of higher-order modes supported by the waveguide and scattered by the LCWG is smaller than that of a conventional LCWG, which suppresses the deterioration of quantum efficiency. This contributes to high-power operation for laser processing, since the maximum output power of an array is sensitive to the efficiency. Even at 55 W from a single InGaN array chip, averaged lateral beam-quality factor of 4.9 is successfully obtained for individual emissions in the array.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2021.3109281