DRAMsim3: A Cycle-Accurate, Thermal-Capable DRAM Simulator

DRAM technology has developed rapidly in recent years. Several industrial solutions offer 3D packaging of DRAM and some are envisioning the integration of CPU and DRAM on the same die. These solutions allow higher density and better performance and also lower power consumption in DRAM designs. Howev...

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Bibliographic Details
Published inIEEE computer architecture letters Vol. 19; no. 2; pp. 106 - 109
Main Authors Li, Shang, Yang, Zhiyuan, Reddy, Dhiraj, Srivastava, Ankur, Jacob, Bruce
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
3D-modeling
Computational modeling
Computer simulation
cycle-accurate
DRAM
Dynamic random access memory
Integrated circuit modeling
Power consumption
Protocols
Random access memory
simulation
Simulators
Thermal analysis
Thermal conductivity
thermal modeling
Thermal resistance
Thermal simulation
Three dimensional models
Three-dimensional displays
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Summary:DRAM technology has developed rapidly in recent years. Several industrial solutions offer 3D packaging of DRAM and some are envisioning the integration of CPU and DRAM on the same die. These solutions allow higher density and better performance and also lower power consumption in DRAM designs. However, accurate simulation tools have not kept up with DRAM technology, especially for the modeling of 3D DRAMs. In this letter we present a cycle-accurate, validated DRAM simulator, and DRAMsim3, which offers the best simulation performance and feature sets among existing cycle-accurate DRAM simulators. DRAMsim3 is also the first DRAM simulator to offer runtime thermal modeling alongside with performance modeling.
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ISSN:1556-6056
1556-6064
DOI:10.1109/LCA.2020.2973991