An InP-Based Mid-Wave Infrared Up-Converter Utilizing Cascade Carrier Transportation
Semiconductor-based up-conversion infrared (IR) photodetectors have the advantages of pixelless imaging and being free from thermal mismatch between photodetector and read-out integrated circuit. Profited by cascade carrier transportation, cascade IR up-converters (CIUPs) provide a fresh idea to eas...
Saved in:
Published in | IEEE photonics technology letters Vol. 28; no. 12; pp. 1371 - 1374 |
---|---|
Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
15.06.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | Semiconductor-based up-conversion infrared (IR) photodetectors have the advantages of pixelless imaging and being free from thermal mismatch between photodetector and read-out integrated circuit. Profited by cascade carrier transportation, cascade IR up-converters (CIUPs) provide a fresh idea to ease the contradiction between dark current and responsivity. For GaAs-based mid-wave IR CIUP, a strained InGaAs/AlGaAs material system is an essential configuration, in spite of the limitation of lattice-mismatched epitaxy. An InGaAs/InAlAs material system lattice-matched to InP substrate is a promising alternative to the strained InGaAs/AlGaAs structures. In this letter, an InP-based mid-wave IR CIUP is demonstrated with a 4.7-μm peak response wavelength and 1.19-μm peak emission wavelength. For the up-conversion system, the dark-current-limited detectivity reaches 1.1×10 11 Jones at 78 K and 1.3 V CIUP bias, and the background-limited infrared performance condition is achieved at 107 K with the detectivity of 1.2 × 10 10 Jones. |
---|---|
AbstractList | Semiconductor-based up-conversion infrared (IR) photodetectors have the advantages of pixelless imaging and being free from thermal mismatch between photodetector and read-out integrated circuit. Profited by cascade carrier transportation, cascade IR up-converters (CIUPs) provide a fresh idea to ease the contradiction between dark current and responsivity. For GaAs-based mid-wave IR CIUP, a strained InGaAs/AlGaAs material system is an essential configuration, in spite of the limitation of lattice-mismatched epitaxy. An InGaAs/InAlAs material system lattice-matched to InP substrate is a promising alternative to the strained InGaAs/AlGaAs structures. In this letter, an InP-based mid-wave IR CIUP is demonstrated with a 4.7-μm peak response wavelength and 1.19-μm peak emission wavelength. For the up-conversion system, the dark-current-limited detectivity reaches 1.1×10 11 Jones at 78 K and 1.3 V CIUP bias, and the background-limited infrared performance condition is achieved at 107 K with the detectivity of 1.2 × 10 10 Jones. Semiconductor-based up-conversion infrared (IR) photodetectors have the advantages of pixelless imaging and being free from thermal mismatch between photodetector and read-out integrated circuit. Profited by cascade carrier transportation, cascade IR up-converters (CIUPs) provide a fresh idea to ease the contradiction between dark current and responsivity. For GaAs-based mid-wave IR CIUP, a strained InGaAs/AlGaAs material system is an essential configuration, in spite of the limitation of lattice-mismatched epitaxy. An InGaAs/InAlAs material system lattice-matched to InP substrate is a promising alternative to the strained InGaAs/AlGaAs structures. In this letter, an InP-based mid-wave IR CIUP is demonstrated with a 4.7-[Formula Omitted] peak response wavelength and 1.19-[Formula Omitted] peak emission wavelength. For the up-conversion system, the dark-current-limited detectivity reaches [Formula Omitted] Jones at 78 K and 1.3 V CIUP bias, and the background-limited infrared performance condition is achieved at 107 K with the detectivity of [Formula Omitted] Jones. |
Author | Yi Luo Lai Wang Lei Wang Chao Wang Yan-Jun Han Jian Wang Chang-Zheng Sun Jian-Bin Kang Zhi-Biao Hao Hong-Tao Li Li-Li Xie Bing Xiong |
Author_xml | – sequence: 1 givenname: Jian-Bin surname: Kang fullname: Kang, Jian-Bin – sequence: 2 givenname: Lei surname: Wang fullname: Wang, Lei – sequence: 3 givenname: Zhi-Biao surname: Hao fullname: Hao, Zhi-Biao – sequence: 4 givenname: Chao surname: Wang fullname: Wang, Chao – sequence: 5 givenname: Li-Li surname: Xie fullname: Xie, Li-Li – sequence: 6 givenname: Lai surname: Wang fullname: Wang, Lai – sequence: 7 givenname: Jian surname: Wang fullname: Wang, Jian – sequence: 8 givenname: Bing surname: Xiong fullname: Xiong, Bing – sequence: 9 givenname: Chang-Zheng surname: Sun fullname: Sun, Chang-Zheng – sequence: 10 givenname: Yan-Jun surname: Han fullname: Han, Yan-Jun – sequence: 11 givenname: Hong-Tao surname: Li fullname: Li, Hong-Tao – sequence: 12 givenname: Yi surname: Luo fullname: Luo, Yi |
BookMark | eNo9UE1Lw0AQXaSCtXoXvAQ8p84km-zmWIsfhYo9pHhc1s1EttRN3E0L-uvd0uJp3ryPGXiXbOQ6R4zdIEwRobpfruppBlhOs4LzXMgzNsaKYwoo-ChiiBgxLy7YZQgbAORFzsesnrlk4Vbpgw7UJK-2Sd_1niLVeu0js-7Teef25AfyyXqwW_tr3Wcy18HohuL03kal9tqFvvODHmznrth5q7eBrk9zwtZPj_X8JV2-PS_ms2VqsgqH1HxILNpWA1SlQZ4VBa-wyXKNIKjMUHMBAgoUujFEVUUS4sbbpjRNKzOTT9jd8W7vu-8dhUFtup138aVCIQWWQkoZXXB0Gd-F4KlVvbdf2v8oBHXoTsXu1KE7deouRm6PEUtE_3YRNZ6X-R9xemro |
CODEN | IPTLEL |
CitedBy_id | crossref_primary_10_1016_j_infrared_2018_11_002 crossref_primary_10_1109_LPT_2017_2693997 |
Cites_doi | 10.1063/1.97928 10.1049/el:20000915 10.1063/1.1899226 10.1088/0268-1242/23/8/085007 10.1063/1.3643515 10.1063/1.124442 10.1063/1.372135 10.1109/TED.2003.819249 10.1063/1.1421216 10.7498/aps.64.178502 10.1109/JQE.2009.2017929 10.1016/S1350-4495(99)00047-X 10.1109/68.980504 10.1109/LPT.2005.858153 10.1063/1.4932116 |
ContentType | Journal Article |
Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 |
Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 |
DBID | 97E RIA RIE AAYXX CITATION 7SP 7U5 8FD L7M |
DOI | 10.1109/LPT.2016.2544378 |
DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005-present IEEE All-Society Periodicals Package (ASPP) 1998-Present IEEE CrossRef Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | CrossRef Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
DatabaseTitleList | Solid State and Superconductivity Abstracts |
Database_xml | – sequence: 1 dbid: RIE name: IEEE url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Applied Sciences Engineering Physics |
EISSN | 1941-0174 |
EndPage | 1374 |
ExternalDocumentID | 4047081861 10_1109_LPT_2016_2544378 7437436 |
Genre | orig-research |
GrantInformation_xml | – fundername: National Basic Research Program of China grantid: 2013CB632804 – fundername: National Natural Science Foundation of China grantid: 61176015; 61176059; 61210014; 61307024; 61321004 funderid: 10.13039/501100001809 |
GroupedDBID | -~X 0R~ 29I 4.4 5GY 6IK 97E AAJGR AASAJ ABQJQ ABVLG ACGFO ACGFS ACIWK AENEX ALMA_UNASSIGNED_HOLDINGS ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ IFIPE IPLJI JAVBF LAI M43 O9- OCL P2P RIA RIE RIG RNS TN5 TWZ AAYXX CITATION 7SP 7U5 8FD L7M |
ID | FETCH-LOGICAL-c291t-cb815ffa0096c14255491d23a107e621a47070517adcee99e800514fd6cdf82c3 |
IEDL.DBID | RIE |
ISSN | 1041-1135 |
IngestDate | Thu Oct 10 19:15:25 EDT 2024 Fri Aug 23 01:05:14 EDT 2024 Wed Jun 26 19:30:47 EDT 2024 |
IsPeerReviewed | false |
IsScholarly | true |
Issue | 12 |
Keywords | cascade transportation Infrared up-converter intersubband transition |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c291t-cb815ffa0096c14255491d23a107e621a47070517adcee99e800514fd6cdf82c3 |
PQID | 1787167888 |
PQPubID | 85439 |
PageCount | 4 |
ParticipantIDs | proquest_journals_1787167888 crossref_primary_10_1109_LPT_2016_2544378 ieee_primary_7437436 |
PublicationCentury | 2000 |
PublicationDate | 2016-06-15 |
PublicationDateYYYYMMDD | 2016-06-15 |
PublicationDate_xml | – month: 06 year: 2016 text: 2016-06-15 day: 15 |
PublicationDecade | 2010 |
PublicationPlace | New York |
PublicationPlace_xml | – name: New York |
PublicationTitle | IEEE photonics technology letters |
PublicationTitleAbbrev | LPT |
PublicationYear | 2016 |
Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
References | ref13 ref12 ref15 ref14 ref11 ref2 ref1 ref8 ref7 ref9 ref4 ref3 ref6 ref5 jian-bin (ref10) 2015; 64 |
References_xml | – ident: ref1 doi: 10.1063/1.97928 – ident: ref7 doi: 10.1049/el:20000915 – ident: ref8 doi: 10.1063/1.1899226 – ident: ref6 doi: 10.1088/0268-1242/23/8/085007 – ident: ref9 doi: 10.1063/1.3643515 – ident: ref3 doi: 10.1063/1.124442 – ident: ref13 doi: 10.1063/1.372135 – ident: ref14 doi: 10.1109/TED.2003.819249 – ident: ref5 doi: 10.1063/1.1421216 – volume: 64 start-page: 178502 year: 2015 ident: ref10 article-title: Studies on carrier-blocking structures for up-conversion infrared photodetectors publication-title: Acta Phys Sinica doi: 10.7498/aps.64.178502 contributor: fullname: jian-bin – ident: ref15 doi: 10.1109/JQE.2009.2017929 – ident: ref11 doi: 10.1016/S1350-4495(99)00047-X – ident: ref2 doi: 10.1109/68.980504 – ident: ref12 doi: 10.1109/LPT.2005.858153 – ident: ref4 doi: 10.1063/1.4932116 |
SSID | ssj0014534 |
Score | 2.2337654 |
Snippet | Semiconductor-based up-conversion infrared (IR) photodetectors have the advantages of pixelless imaging and being free from thermal mismatch between... |
SourceID | proquest crossref ieee |
SourceType | Aggregation Database Publisher |
StartPage | 1371 |
SubjectTerms | Absorption cascade transportation Current measurement Dark current III-V semiconductor materials Indium phosphide infrared up-converter intersubband transition Semiconductor device measurement Transportation |
Title | An InP-Based Mid-Wave Infrared Up-Converter Utilizing Cascade Carrier Transportation |
URI | https://ieeexplore.ieee.org/document/7437436 https://www.proquest.com/docview/1787167888 |
Volume | 28 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3dS-QwEB90QdCHW1093PODPNyLYNamTdP2URdFxT182EXfSpqksChd2e3eg3_9zaTdRfQeLIWW0oQwk2RmMr-ZAfjt6Eqs5CaThsukSHgRuZBrq5Q1EWroguKdR3_U7UTeP8fPG3C-joXBph585gb06n35dmaWdFR2gdIOb7UJm2kQNrFaa4-BjBsPciAFFyKKVy7JILt4eBwThksNKB1XRAXVPoggX1Ply0bspctNF0arcTWgkpfBsi4G5v1TysbvDnwXfrRqJrts5sUebLiqB91W5WTtgl70YOdDPsIebHk8qFnsw_iyYnfVI79CIWfZaGr5k_7r8FM5J8Q6m7zxIeHVCRDKJvX0dfqOPbChXhDeHp9zqoTH1qnTPf8PYHJzPR7e8rYAAzdhJmpuilTEZanJzjECVzcak8KGkUab0alQaJngjhGLRFuUtVnmUp9OvbTK2DINTfQTOtWscofAnHYqSgJLGqZMS6mRIHEiUxUXBeqYtg9nK57kb02ejdzbJ0GWI_9y4l_e8q8P-0Ti9X8tdftwvGJi3i7ERS4SsgjJzv_1_1ZHsE19E_pLxMfQqedLd4J6Rl2c-gn2Dxm-zec |
link.rule.ids | 315,786,790,802,27955,27956,55107 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1RT9swED4BE2I8jFGY1o1tfuBlEi5x4tjJI6uGytYiHlrBW-TYjlRtCqhN98Cv585JK8T2sChSoih2rDvbd5f77g7g1NOhneQ2l5ZLXWpeJj7mxinlbIIauqB458m1Gs3kj7v0bgvONrEw2DSAz_yAboMv393bFf0qO0dph6fahlco5yPdRmttfAYybX3IkRRciCRdOyWj_Hx8MyUUlxpQQq6ESqo9E0KhqspfW3GQL5cHMFmPrIWV_BqsmnJgH18kbfzfob-FN52iyS7amXEIW77uwUGndLJuSS97sP8sI2EPdgMi1C6PYHpRs6v6hn9DMefYZO74rfnj8VG1IMw6mz3wISHWCRLKZs389_wRe2BDsyTEPV4XVAuPbZKnhxlwDLPL79PhiHclGLiNc9FwW2YirSpDlo4VuL7RnBQuTgyS36tYGKlxz0iFNg6lbZ77LCRUr5yyrspim7yDnfq-9u-BeeNVoiNHOqbMKmmQIKmWmUrLErVM14eva54UD22mjSJYKFFeIP8K4l_R8a8PR0TizXsddftwsmZi0S3FZSE02YRk6X_4d6svsDeaTsbF-Or650d4Td8hLJhIT2CnWaz8J9Q6mvJzmGxPIMjROw |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=An+InP-Based+Mid-Wave+Infrared+Up-Converter+Utilizing+Cascade+Carrier+Transportation&rft.jtitle=IEEE+photonics+technology+letters&rft.au=Jian-Bin+Kang&rft.au=Lei+Wang&rft.au=Zhi-Biao+Hao&rft.au=Chao+Wang&rft.date=2016-06-15&rft.pub=IEEE&rft.issn=1041-1135&rft.eissn=1941-0174&rft.volume=28&rft.issue=12&rft.spage=1371&rft.epage=1374&rft_id=info:doi/10.1109%2FLPT.2016.2544378&rft.externalDocID=7437436 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1041-1135&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1041-1135&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1041-1135&client=summon |