An InP-Based Mid-Wave Infrared Up-Converter Utilizing Cascade Carrier Transportation
Semiconductor-based up-conversion infrared (IR) photodetectors have the advantages of pixelless imaging and being free from thermal mismatch between photodetector and read-out integrated circuit. Profited by cascade carrier transportation, cascade IR up-converters (CIUPs) provide a fresh idea to eas...
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Published in | IEEE photonics technology letters Vol. 28; no. 12; pp. 1371 - 1374 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
15.06.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Semiconductor-based up-conversion infrared (IR) photodetectors have the advantages of pixelless imaging and being free from thermal mismatch between photodetector and read-out integrated circuit. Profited by cascade carrier transportation, cascade IR up-converters (CIUPs) provide a fresh idea to ease the contradiction between dark current and responsivity. For GaAs-based mid-wave IR CIUP, a strained InGaAs/AlGaAs material system is an essential configuration, in spite of the limitation of lattice-mismatched epitaxy. An InGaAs/InAlAs material system lattice-matched to InP substrate is a promising alternative to the strained InGaAs/AlGaAs structures. In this letter, an InP-based mid-wave IR CIUP is demonstrated with a 4.7-μm peak response wavelength and 1.19-μm peak emission wavelength. For the up-conversion system, the dark-current-limited detectivity reaches 1.1×10 11 Jones at 78 K and 1.3 V CIUP bias, and the background-limited infrared performance condition is achieved at 107 K with the detectivity of 1.2 × 10 10 Jones. |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2016.2544378 |