GaN High-Electron Mobility Transistor Track-and-Hold Sampling Circuit With Over 100-dB Signal-to-Noise Ratio

A track-and-hold sampling circuit (THSC) fabricated in gallium nitride (GaN) high-electron mobility transistor (HEMT) on silicon carbide substrate is presented for the first time, considering the impact of GaN HEMT memory effects on the sampled signal. A single-transistor GaN track-and-hold sampler...

Full description

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 37; no. 10; pp. 1314 - 1317
Main Authors Srivastava, Puneet, SungWon Chung, Piedra, Daniel, Hae-Seung Lee, Palacios, Tomas
Format Journal Article
LanguageEnglish
Published New York IEEE 01.10.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
analog-to-digital converter (ADC)
Clocks
Frequency measurement
Gallium nitride
GaN
HEMT
HEMTs
Logic gates
mixed-signal
Schottky diodes
Signal to noise ratio
track-and-hold (T/H)
Online AccessGet full text

Cover

More Information
Summary:A track-and-hold sampling circuit (THSC) fabricated in gallium nitride (GaN) high-electron mobility transistor (HEMT) on silicon carbide substrate is presented for the first time, considering the impact of GaN HEMT memory effects on the sampled signal. A single-transistor GaN track-and-hold sampler with an external gate-bootstrapping sampling clock demonstrates over 100-dB signal-to-noise ratio with 700-MHz track-mode bandwidth.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2598806