Analysis of 7/8-nm Bulk-Si FinFET Technologies for 6T-SRAM Scaling

The benefits of a super-steep retrograde (SSR) fin doping profile, which can be achieved using the oxygen insertion technology, are quantified via 3-D technology computer-aided design simulations for the 7/8-nm bulk-Si FinFET technology targeting low-power applications. A calibrated compact model is...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 63; no. 4; pp. 1502 - 1507
Main Authors Xi Zhang, Connelly, Daniel, Peng Zheng, Takeuchi, Hideki, Hytha, Marek, Mears, Robert J., Tsu-Jae King Liu
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Doping
FinFETs
Leakage currents
Logic gates
Random access memory
Solid modeling
variability
super-steep retrograde (SSR)
FinFET
six-transistor (6T) static RAM (SRAM)
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Summary:The benefits of a super-steep retrograde (SSR) fin doping profile, which can be achieved using the oxygen insertion technology, are quantified via 3-D technology computer-aided design simulations for the 7/8-nm bulk-Si FinFET technology targeting low-power applications. A calibrated compact model is then used to estimate the six-transistor static RAM cell performance and yield. The SSR FinFET technology is projected to provide for up to 100 mV reduction in minimum cell supply voltage, to facilitate voltage scaling to below 0.50 V.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2523885