Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers
Broad-beam and microbeam single-event effect tests were performed on metal-insulator-metal capacitors with three different thicknesses of silicon nitride (Si 3 N 4 ) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectr...
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Published in | IEEE transactions on nuclear science Vol. 65; no. 2; pp. 732 - 738 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.02.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Broad-beam and microbeam single-event effect tests were performed on metal-insulator-metal capacitors with three different thicknesses of silicon nitride (Si 3 N 4 ) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the failure occurs in the body of the capacitor. |
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ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/TNS.2018.2791564 |