Low temperature growth of ZnSe/GaAs using post-heated molecular beams

MBE growth of ZnSe/GaAs could be successfully performed at the substrate temperature as low as of 100°C using the molecular beams post-heated at 600°C both for Zn and Se by means of modified Knudsen cells composed of the effuser and the post-heating zone. ZnSe epilayers grown at 100-150°C showed the...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 30; no. 6A; pp. L1042 - L1044
Main Authors OHISHI, M, SAITO, H, FUJISAKI, Y, TORIHARA, H, ABLET, I
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.06.1991
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Gallium Arsenides
Reflection high energy electron diffraction
Molecular beam condensation
Epitaxy
Photoluminescence
Zinc Selenides
Surface
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Summary:MBE growth of ZnSe/GaAs could be successfully performed at the substrate temperature as low as of 100°C using the molecular beams post-heated at 600°C both for Zn and Se by means of modified Knudsen cells composed of the effuser and the post-heating zone. ZnSe epilayers grown at 100-150°C showed the strong I 2 bound exciton line and almost no other luminescence such as donor-acceptor pair, Y, S and deep emission at 4 K.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.l1042