Radiation Hardening by Process of CBRAM Resistance Switching Cells

Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 63; no. 4; pp. 2145 - 2151
Main Authors Gonzalez-Velo, Yago, Mahmud, Adnan, Wenhao Chen, Taggart, Jennifer Lynn, Barnaby, Hugh J., Kozicki, Michael N., Ailavajhala, Mahesh, Holbert, Keith E., Mitkova, Maria
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Chalcogenide glass
conductive bridging RAM (CBRAM)
nanoionics memory
non-volatile-memory (NVM)
programmable metallization cell (PMC)
radiation effects
radiation hardening by process
ReRAM
resistive switching
total ionizing dose
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Summary:Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise for both high density memory and high total ionizing dose resilience. In this work, it is discovered that CBRAM can be sensitive to high TID levels. However, this novel technology can be radiation-hardened by process, which is demonstrated in this paper.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2016.2569076