High-mobility bottom-gate thin-film transistors with laser-crystallized and hydrogen-radical-annealed polysilicon films

High-performance bottom-gate thin-film transistors (TFTs) have been realized with excimer-laser-crystallized polysilicon films, for the first time. TFT characteristics were greatly dependent on the silicon film thickness as well as the pulsed-laser energy density. It was found also that posthydrogen...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 30; no. 12B; pp. 3704 - 3709
Main Authors SHIMIZU, K, HOSOYA, H, SUGIURA, O, MATSUMURA, M
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.12.1991
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Field effect transistor
Laser beam
Excimer
Crystallization
Charge carrier mobility
Polycrystal
Silicon
Thin film transistor
Thermal annealing
Hydrogenation
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Summary:High-performance bottom-gate thin-film transistors (TFTs) have been realized with excimer-laser-crystallized polysilicon films, for the first time. TFT characteristics were greatly dependent on the silicon film thickness as well as the pulsed-laser energy density. It was found also that posthydrogenation based on hydrogen-radical annealing improves the TFT characteristics drastically. The field-effect mobilities exceeded 220 cm 2 /Vs for electrons and 140 cm 2 /Vs for holes, respectively.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.30.3704