Dual-Color InAs/GaSb Cascaded Superlattice Light-Emitting Diodes

Over the last decade, InAs/GaSb superlattice structures have become an increasingly important technology for infrared applications. By stacking two superlattice structures back-to-back with a conductive layer separating them, independently operable, dual color, cascaded InAs/GaSb superlattice light-...

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Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 51; no. 12; pp. 1 - 6
Main Authors Ricker, Russell J., Hudson, Andrew, Provence, Sydney, Norton, Dennis T., Olesberg, Jonathon T., Murray, Lee M., Prineas, John P., Boggess, Thomas F.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2015
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Arrays
Color
infrared imaging
infrared scene projection
Junctions
Light emitting diodes
semiconductor superlattices
Superlattices
Temperature
infrared imaging
infrared scene projection
Light-emitting diodes
semiconductor superlattices
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Summary:Over the last decade, InAs/GaSb superlattice structures have become an increasingly important technology for infrared applications. By stacking two superlattice structures back-to-back with a conductive layer separating them, independently operable, dual color, cascaded InAs/GaSb superlattice light-emitting diodes were grown via molecular beam epitaxy on (100) GaSb substrates. An 8 × 8 matrix of 48-μm pitch pixels was fabricated using standard photolithography and wet-etch techniques. At 77 K, the emitted wavelengths are in the 3.2-4.2- and 4.2-5.2-μm range, with peak wavelengths at 3.81 and 4.72 μm. In quasi-continuous operation, radiances in excess of 2 W/cm 2 · sr from the longer wave and 5 W/cm 2 · sr from the shorter wave emitters are achieved.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2015.2497538