Effect of Cell Placement on Single-Event Transient Pulse in a Bulk FinFET Technology

In this article, five different cell placement structures of a vertical inverter chain were designed in a commercial bulk FinFET technology to investigate the effect of cell placement on a single-event transient (SET) pulse. 3-D TCAD mixed-mode simulation indicated that the cell placement has a sign...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 68; no. 5; pp. 1103 - 1110
Main Authors Huang, Pengcheng, Zhao, Zhenyu, Chi, Yaqing, Liang, Bin, Ma, Chiyuan, Sun, Qian, Wu, Zhenyu
Format Journal Article
LanguageEnglish
Published New York IEEE 01.05.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Cell placement
charge sharing
Cyclotrons
FinFET
FinFETs
Heavy ions
Inverters
Layout
Logic gates
Mixed mode simulation
Placement
pulse quenching
single-event transient (SET)
Technology
Transient analysis
Transistors
Online AccessGet full text

Cover

More Information
Summary:In this article, five different cell placement structures of a vertical inverter chain were designed in a commercial bulk FinFET technology to investigate the effect of cell placement on a single-event transient (SET) pulse. 3-D TCAD mixed-mode simulation indicated that the cell placement has a significant effect on SET pulsewidths. Heavy-ion experiments at Cyclotron in the China Institute of Modern Physics in Lanzhou also indicated that the effect of cell placement on the SET pulse is obvious. The experiment also indicated that the effect of cell placement on P-hit SET is larger than that on N-hit SET, and charge sharing in vertical was becoming as important as that in horizontal.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2021.3070588