Theoretical Analysis and Verification of Electron-Bombardment-Induced Photoconductivity in Vacuum Flat-Panel  Detectors

Vacuum flat-panel detectors (VFPDs) using a cold cathode and photoconductor have important applications in large-area photodetectors; however, the mechanism for achieving high photoresponsivity must be further explored. In this article, theoretical analysis was performed to examine the electron-bomb...

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Bibliographic Details
Published inJournal of lightwave technology Vol. 39; no. 8; pp. 2618 - 2624
Main Authors Bai, Xinpeng, Zhang, Zhipeng, Chen, Manni, Wang, Kai, She, Juncong, Deng, Shaozhi, Chen, Jun
Format Journal Article
LanguageEnglish
Published New York IEEE 15.04.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Cathodes
Charge carrier density
Circuits
Cold Cathode
Cold cathodes
Dark current
Detectors
Dynamic range
Electric fields
Electron beams
Electron Bombardment
Electrons
Equivalent Circuit Model
Equivalent circuits
Flat Panel Detector
Irradiation
Multiplication
Nanowires
Photoconducting materials
Photoconductivity
Photodetectors
Responsivity
Thickness
Zinc oxide
ZnS Photoconductor
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Summary:Vacuum flat-panel detectors (VFPDs) using a cold cathode and photoconductor have important applications in large-area photodetectors; however, the mechanism for achieving high photoresponsivity must be further explored. In this article, theoretical analysis was performed to examine the electron-bombardment-induced photoconductivity (EBIPC) effect based on the equivalent circuit model. Formulas for photo/dark current were derived, which indicated that carrier multiplication was mainly due to energetic electron bombardment. The theoretical formulas also revealed the carrier multiplication mode inside the photoconductor of VFPDs and the relationship between the responsivity and device parameters. To verify the theoretical results, VFPDs with a ZnS photoconductor and ZnO nanowire cold cathode were studied. The responsivity initially increased and then decreased by increasing the photoconductor thickness. In addition, a broad dynamic range was achieved with a linear dynamic range of 106.02 dB, which was attributed to the efficient collection of carriers induced by EBIPC at the optimized thickness. Our theoretical results were validated by the experimental results and can provide guidance for developing VFPDs based on EBPIC.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2021.3049542