A Simple Thermoelectric Effect Setup for Determining the Conductivity Type of Thin Film Materials
In this article, we present a simple and low-cost experimental setup for thermoelectric effect measurements of thin film materials near room temperature, which can be used to determine their conductivity types. Bi 2 Te 3 and Sb 2 Te 3 thin films grown by the molecular beam epitaxy technique were use...
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Published in | IEEE transactions on instrumentation and measurement Vol. 70; pp. 1 - 7 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | In this article, we present a simple and low-cost experimental setup for thermoelectric effect measurements of thin film materials near room temperature, which can be used to determine their conductivity types. Bi 2 Te 3 and Sb 2 Te 3 thin films grown by the molecular beam epitaxy technique were used as the tested samples. Their Seebeck coefficients were determined to be (-141 ± 1) μV/K and (39 ± 2) μV/K, respectively, confirming that the former is an n-type material and the latter is a p-type material. A heterostructure composed of Sb2Te3 and Bi2Te3 was characterized by electrical transport measurements. Data fitting was carried out for its current-voltage characteristics with the Shockley diode model and a real diode model proposed by Cataldo et al., and some physical parameters of the heterostructure were extracted, including its ideality factor and saturation current. Based on its rectifying current-voltage behavior, we confirm that the aforementioned heterostructure is a p-n junction, which echoes the contrast in the conductivity types of Sb 2 Te 3 and Bi 2 Te 3 as determined by the thermoelectric effect measurements. |
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ISSN: | 0018-9456 1557-9662 |
DOI: | 10.1109/TIM.2020.3046922 |