A Simple Thermoelectric Effect Setup for Determining the Conductivity Type of Thin Film Materials

In this article, we present a simple and low-cost experimental setup for thermoelectric effect measurements of thin film materials near room temperature, which can be used to determine their conductivity types. Bi 2 Te 3 and Sb 2 Te 3 thin films grown by the molecular beam epitaxy technique were use...

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Bibliographic Details
Published inIEEE transactions on instrumentation and measurement Vol. 70; pp. 1 - 7
Main Authors Brian Pang, Chun Sum, Ng, Wessley, Liang, Jing, Qu, Qing, Martin Chau, Ho Tin, Niu, Muyao, Cheng, Man Kit, Sou, Iam Keong
Format Journal Article
LanguageEnglish
Published New York IEEE 2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:In this article, we present a simple and low-cost experimental setup for thermoelectric effect measurements of thin film materials near room temperature, which can be used to determine their conductivity types. Bi 2 Te 3 and Sb 2 Te 3 thin films grown by the molecular beam epitaxy technique were used as the tested samples. Their Seebeck coefficients were determined to be (-141 ± 1) μV/K and (39 ± 2) μV/K, respectively, confirming that the former is an n-type material and the latter is a p-type material. A heterostructure composed of Sb2Te3 and Bi2Te3 was characterized by electrical transport measurements. Data fitting was carried out for its current-voltage characteristics with the Shockley diode model and a real diode model proposed by Cataldo et al., and some physical parameters of the heterostructure were extracted, including its ideality factor and saturation current. Based on its rectifying current-voltage behavior, we confirm that the aforementioned heterostructure is a p-n junction, which echoes the contrast in the conductivity types of Sb 2 Te 3 and Bi 2 Te 3 as determined by the thermoelectric effect measurements.
ISSN:0018-9456
1557-9662
DOI:10.1109/TIM.2020.3046922