Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application

• Published in: IEEE transactions on electron devices Vol. 68; no. 9; pp. 4363 - 4367
• Main Authors: Chen, Ying-Chen, Lee, Jack, Lin, Chih-Yang
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.09.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Arrays; Data storage; Fabrication; Graphite; Hafnium oxide; Memory devices; Memory management; Memristors; Nonvolatile memory; Random access memory; Resistive random-access memory (RRAM); resistive switching; Selectivity; selectorless; sneak path current; Switches; Switching; Switching circuits; volatile
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2021.3095438

The dual-functional resistive random-access memories (RRAMs) are presented as the nonvolatile switching (NVS) memory and volatile threshold switching (VTS) devices by changing the operation polarities in the identical memory device. The built-in nonlinearity is demonstrated of~10 2 in NVS for the selectorless memristor, and the selectivity is of ~10 3 in volatile switching for the selector device application. The crossbar array of HfO x /graphite stacks is implementing an improved read margin with nonvolatile selectorless unit. In comparison with current memory technology, the dual-functional hybrid selectorless memristor in this work is presented by low thermal budget, high ON- OFF ratio (~10 2 ), good self-selectivity in selectorless memory (~10 12 ), high selectivity in selection device (~10 3 ), and low switching voltage for both memory and selection devices. The dual-functional switching behaviors not only provide the effective ways to 3-D integration for storage class memory, but also for emerging computing paradigms such as in-memory computing and neuromorphic computing applications.