Excitation/Inhibition Balancing in 2D Synaptic Transistors With Minority-Carrier Charge Dynamics

Most of the reported synaptic FETs with majority-carrier charge traps suffered from unbalanced excitatory and inhibitory behaviors. Here, we demonstrate an ambipolar WSe2 synaptic FET with the charge dynamics of both electron and hole charge traps. The device shows balanced excitation and inhibition...

Full description

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 44; no. 1; pp. 156 - 159
Main Authors Wu, Rongqi, Liu, Xiaochi, Wang, Zhongwang, Jing, Yumei, Yuan, Yahua, Tang, Kui, Dai, Xianfu, Qiu, Aocheng, Jaiswal, Hemendra N., Sun, Jia, Li, Huamin, Sun, Jian
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Accuracy
Behavioral sciences
Charge carrier processes
charge dynamics
Current carriers
Electron traps
Excitation
Field effect transistors
Logic gates
neural plasticity
Neuromorphic engineering
Pattern recognition
Sun
Synaptic transistor
Online AccessGet full text

Cover

More Information
Summary:Most of the reported synaptic FETs with majority-carrier charge traps suffered from unbalanced excitatory and inhibitory behaviors. Here, we demonstrate an ambipolar WSe2 synaptic FET with the charge dynamics of both electron and hole charge traps. The device shows balanced excitation and inhibition to a gate stimulation, due to the participation of minority-carrier charge traps. As a result, a nearly zero asymmetry with low nonlinearity of 0.04 is realized in long-term potentiation and depression (LTP/LTD). Good device repeatability is confirmed by device-to-device and cycle-to-cycle tests. A high accuracy of 92.8% is realized in the pattern recognition simulation. The proposed devices possess great potential in high-accuracy neuromorphic computing applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3224471