Ballisticity Saturation by Unscalable Reflections

The intrinsic limit on ballisticity of ultra-scaled transistors is investigated. A novel probing technique is presented, which locally resolves the loss of incident fluxes. This projection reveals the scalable and unscalable components of reflection. The poor ballisticity is explained by non-equilib...

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Bibliographic Details
Published inIEEE electron device letters Vol. 41; no. 7; pp. 969 - 972
Main Authors Pourghaderi, M. Ali, Ilatikhameneh, Hesameddin, Pham, Anh-Tuan, Park, Hong-Hyun, Lim, Jinyoung, Jiang, Zhengping, Wang, Jing, Jin, Seonghoon, Kim, Jongchol, Kwon, Uihui, Chung, Won-Young, Choi, Woosung, Kim, Dae Sin
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Backscatter
compact modeling
Fluxes
Object recognition
Performance evaluation
Potential barriers
Quantum transport
Scattering
Semiconductor device measurement
Transistors
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Summary:The intrinsic limit on ballisticity of ultra-scaled transistors is investigated. A novel probing technique is presented, which locally resolves the loss of incident fluxes. This projection reveals the scalable and unscalable components of reflection. The poor ballisticity is explained by non-equilibrium distribution around the potential barrier, which triggers a substantial unscalable reflections.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2993238