Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

• Published in: IEEE transactions on electron devices Vol. 68; no. 6; pp. 2867 - 2871
• Main Authors: Wang, Ting-Ting, Wang, Xiao, He, Yue, Jia, Mao, Ye, Qiong, Xu, Yang, Zhang, Yi-Han, Li, Yang, Bai, Li-Hua, Ma, Xiao-Hua, Hao, Yue, Ao, Jin-Ping
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.06.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: AlGaN/GaN Schottky barrier diode (SBD); Aluminum gallium nitride; Aluminum gallium nitrides; Anodes; Bias; breakdown voltage (BV); dual metal nitride anode; Electric potential; Electron gas; Electronic devices; Gallium nitrides; HEMTs; Leakage current; Metal nitrides; Metals; MODFETs; recess structure; Schottky diodes; Tin; turn-on voltage; Voltage; Wide band gap semiconductors
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2021.3071296

High-performance AlGaN/GaN lateral Schottky barrier diodes (SBDs) with recess structure and dual metal nitride anodes were demonstrated. With high work-function and nonrecess structure, a NiN anode enhances the breakdown voltage (BV), while a TiN anode reduces the turn-on voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{ \mathrm{\scriptscriptstyle ON}} </tex-math></inline-formula>) due to its low work-function and contact to the two-dimensional electron gas (2DEG) layer directly on a recess structure. As the length of the NiN anode (<inline-formula> <tex-math notation="LaTeX">{L}_{r} </tex-math></inline-formula>) on the nonrecess region decreases from 75 to 3 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">{V}_{ \mathrm{\scriptscriptstyle ON}} </tex-math></inline-formula> is reduced from 0.56 to 0.30 V, while the reverse leakage current slightly increases from <inline-formula> <tex-math notation="LaTeX">{3} \times {10}^{-{4}} </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">{2} \times {10}^{-{3}} </tex-math></inline-formula> A/cm 2 at the bias of −10 V. The lateral AlGaN/GaN SBD with a <inline-formula> <tex-math notation="LaTeX">{L}_{r} </tex-math></inline-formula> of 3 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> at a distance of cathode-anode (<inline-formula> <tex-math notation="LaTeX">{L}_{\text {AC}} </tex-math></inline-formula>) of 20 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> achieves a high BV of 1.62 kV, an ultralow <inline-formula> <tex-math notation="LaTeX">{V}_{ \mathrm{\scriptscriptstyle ON}} </tex-math></inline-formula> of 0.30 V and a small capacitance of 6.0 pF at zero bias with little degradation on ON-resistance, indicating superior potential application in high-frequency and high-power devices.