Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes
High-performance AlGaN/GaN lateral Schottky barrier diodes (SBDs) with recess structure and dual metal nitride anodes were demonstrated. With high work-function and nonrecess structure, a NiN anode enhances the breakdown voltage (BV), while a TiN anode reduces the turn-on voltage (<inline-formula...
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Published in | IEEE transactions on electron devices Vol. 68; no. 6; pp. 2867 - 2871 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.06.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | High-performance AlGaN/GaN lateral Schottky barrier diodes (SBDs) with recess structure and dual metal nitride anodes were demonstrated. With high work-function and nonrecess structure, a NiN anode enhances the breakdown voltage (BV), while a TiN anode reduces the turn-on voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{ \mathrm{\scriptscriptstyle ON}} </tex-math></inline-formula>) due to its low work-function and contact to the two-dimensional electron gas (2DEG) layer directly on a recess structure. As the length of the NiN anode (<inline-formula> <tex-math notation="LaTeX">{L}_{r} </tex-math></inline-formula>) on the nonrecess region decreases from 75 to 3 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">{V}_{ \mathrm{\scriptscriptstyle ON}} </tex-math></inline-formula> is reduced from 0.56 to 0.30 V, while the reverse leakage current slightly increases from <inline-formula> <tex-math notation="LaTeX">{3} \times {10}^{-{4}} </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">{2} \times {10}^{-{3}} </tex-math></inline-formula> A/cm 2 at the bias of −10 V. The lateral AlGaN/GaN SBD with a <inline-formula> <tex-math notation="LaTeX">{L}_{r} </tex-math></inline-formula> of 3 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> at a distance of cathode-anode (<inline-formula> <tex-math notation="LaTeX">{L}_{\text {AC}} </tex-math></inline-formula>) of 20 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> achieves a high BV of 1.62 kV, an ultralow <inline-formula> <tex-math notation="LaTeX">{V}_{ \mathrm{\scriptscriptstyle ON}} </tex-math></inline-formula> of 0.30 V and a small capacitance of 6.0 pF at zero bias with little degradation on ON-resistance, indicating superior potential application in high-frequency and high-power devices. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2021.3071296 |