Flexible Oxide-Based Schottky Neuromorphic TFTs With Configurable Spiking Dynamic Functions

Capacitively coupled neuromorphic system is very promising for spiking dynamic computing because of the inherent advantages of low static power and large fan-out. Here, flexible multigate indium-gallium-zinc-oxide (IGZO) Schottky thin-film transistors (TFTs) with configurable neuromorphic functions...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 67; no. 11; pp. 5216 - 5220
Main Authors He, Yongli, Zhu, Ying, Chen, Chunsheng, Liu, Rui, Jiang, Shanshan, Zhu, Li, Shi, Yi, Wan, Qing
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Configurable Schottky barrier
Electrodes
Fanout
Gallium
Indium gallium zinc oxide
indium–gallium–zinc–oxide (IGZO) neuromorphic thin-film transistors (TFTs)
Logic gates
Modulation
Neuromorphics
Programming
Schottky barriers
Semiconductor devices
Spiking
spiking dynamic computing
Thin film transistors
Threshold voltage
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Summary:Capacitively coupled neuromorphic system is very promising for spiking dynamic computing because of the inherent advantages of low static power and large fan-out. Here, flexible multigate indium-gallium-zinc-oxide (IGZO) Schottky thin-film transistors (TFTs) with configurable neuromorphic functions are investigated. The channel layer can be effectively modulated by the multigate terminals through electric-double-layer coupling effect. Plastic modulation of Schottky barrier is also demonstrated, which is highly desirable for dynamic synaptic weight modulation. Furthermore, configurable spiking dynamic functions, such as paired-pulse facilitation (PPF) and high-frequency spike filter, are also emulated in such flexible oxide-based Schottky neuromorphic device.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.3022814