Study on Sensing Properties of Ion-Sensitive Field-Effect-Transistors Fabricated With Stack Sensing Membranes

This letter addresses the characteristics of biosensor made of ion-sensitive field-effect-transistors (ISFETs) with stacked 3-aminopropyltriethoxysilane/SiO 2 sensing membranes. These devices exhibit higher sensitivity, lower hysteresis, and lower drift characteristics as compared with the conventio...

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Bibliographic Details
Published inIEEE electron device letters Vol. 37; no. 12; pp. 1642 - 1645
Main Authors Tzu Nien Lee, Chen, Henry J. H., Kuang Chien Hsieh
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Aminopropyltriethoxysilane
APTES
Biomembranes
Biosensors
Field effect transistors
Hysteresis
ISFETs
Logic gates
Membranes
Performance evaluation
SAMs
Semiconductor devices
Sensitivity
Silicon dioxide
Transistors
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Summary:This letter addresses the characteristics of biosensor made of ion-sensitive field-effect-transistors (ISFETs) with stacked 3-aminopropyltriethoxysilane/SiO 2 sensing membranes. These devices exhibit higher sensitivity, lower hysteresis, and lower drift characteristics as compared with the conventional ones made with a simple layer of oxide. Much improved performance makes ISFETs a favorable choice for future bio-sensing applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2619714