Wide Optical Bandwidth and High Output Power Superluminescent Diode Covering C and L Band

We report on the development of a novel superluminescent diode (SLD) design with high output power and a wide optical bandwidth operation. The SLD combines an asymmetrical cladding structure for reduced internal losses and thick quantum wells to obtain emission from both the fundamental level and th...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 26; no. 8; pp. 841 - 844
Main Authors Faugeron, Mickael, Fortin, Catherine, Robert, Yannick, Vinet, Eric, Lelarge, Francois, Brenot, Romain, Van Dijk, Frederic
Format Journal Article
LanguageEnglish
Published New York IEEE 15.04.2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bandwidth
Optical attenuators
Optical fibers
Optical reflection
quantum wells (QWs)
Stimulated emission
Superluminescent diodes
Superluminescent diodes (SLDs)
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Summary:We report on the development of a novel superluminescent diode (SLD) design with high output power and a wide optical bandwidth operation. The SLD combines an asymmetrical cladding structure for reduced internal losses and thick quantum wells to obtain emission from both the fundamental level and the first excited level. The {-}{\rm 3}~{\rm dB} optical bandwidth is equal to 135 nm for a 2-mm long device. For longer devices, the optical bandwidth is slightly reduced but the optical output power increases. By reinjecting a part of the optical power using an external reflector we obtain 27 mW of output power.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2014.2308973