Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States

• Published in: IEEE electron device letters Vol. 41; no. 7; pp. 1110 - 1113
• Main Authors: Simon, Maik, Liang, B., Fischer, D., Knaut, M., Tahn, A., Mikolajick, T., Weber, W. M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.07.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Compressive properties; Configurations; Contact stresses; Current density; electrostatic doping; Field effect transistors; Junctions; Logic gates; multiple-gate devices; Nanowires; omega-gates; polarity control; reconfigurable field effect transistors; Reconfiguration; Semiconductor devices; Silicon; Silicon dioxide; silicon on insulator technology; Symmetry; Tin; Work functions
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2020.2997319

We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high ON/OFF current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi 2 /Si Schottky junctions are formed inside the wire and gated individually. The narrow omega-gated channel is fabricated by a repeated SiO 2 etch and growth sequence and a conformal TiN deposition. The gate and Schottky contact metal work functions and the oxide-induced compressive stress to the Schottky junction are adjusted to result in only factor 1.6 higher p- than n-current for in absolute terms identical gate voltages and identical drain voltages.