All-Optical Phase Memory Circuit Based on Two Coupled Lasers and External Optical Injection

We propose a volatile static all-optical memory capable of storing phase information of a slowly-varying electric field. The scheme and its realization (a memory circuit) are based on two mutually coupled lasers subject to external optical injection. The proposed circuit has a single optical input f...

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Bibliographic Details
Published inIEEE journal of selected topics in quantum electronics Vol. 29; no. 2: Optical Computing; pp. 1 - 11
Main Authors Lerber, Tuomo von, Lyubopytov, Vladimir S., Ylinen, Lauri, Lassas, Matti, Kuppers, Franko
Format Journal Article
LanguageEnglish
Published New York IEEE 01.03.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:We propose a volatile static all-optical memory capable of storing phase information of a slowly-varying electric field. The scheme and its realization (a memory circuit) are based on two mutually coupled lasers subject to external optical injection. The proposed circuit has a single optical input for write and hold operations and two opposite-sign outputs for reading the memory. The proposed circuit operates with a single wavelength of light, a single direction of propagation, and without a need to switch the state of polarization. We prove mathematically that the proposed arrangement has equilibrium points that may discreetly quantify and store the phase in a bistable manner. The circuit is studied numerically for solid-state and semiconductor lasers with zero and non-zero linewidth enhancement factors, respectively. Simulations based on a rate equation system confirm the essential findings. Using typical parameters of a semiconductor laser and optimizing for a possibly wide range of operation, the write-read operations were simulated using PRBS-9 at the rate of 1 Gb/s with negligible errors. The proposed circuit will enable integrated memory implementations for future all-optical signal processing and computing systems.
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ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2023.3239167