Direct Evidence of the Overshoot Suppression in Ta2O5-Based Resistive Switching Memory With an Integrated Access Resistor

• Published in: IEEE electron device letters Vol. 36; no. 10; pp. 1027 - 1029
• Main Authors: Yang-Shun Fan, Leqi Zhang, Crotti, Davide, Witters, Thomas, Jurczak, Malgorzata, Govoreanu, Bogdan
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.10.2015; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Capacitance; Discharges (electric); integrated access resistor; Object recognition; overshoot suppression; Resistance; resistive switching; Resistors; RRAM; RRAM self-capacitance; Switches; Ta2O5; TaOx; Tin; Taox; integrated access resistor; Overshoot suppression; Ta2O5; RRAM self-capacitance; RRAM; resistive switching
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2015.2470081

We demonstrate suppression of the overshoot current effect on a resistive random access memory device with a TiN/Ta 2 O 5 /TaO x /TaN/TiN stack structure. Using test structures with an integrated 5-kΩ series resistor, a nearly 1:1 relation between the compliance current and the first maximum reset current has been achieved, together with an opening of the ON/OFF resistance window to over 100. Besides, the cell size also plays an important role on overshoot suppression, which we relate to the effect of the device self-capacitance discharge during the set switching. According to the experimental results, a simple model for the access circuitry is proposed, which is able to explain well the overshoot impact, by identifying the main capacitance discharge loops during device operation.