Design of Transistors Using High-Permittivity Materials

The design and modeling of dielectric superjunction transistors using combinations of ultrahigh permittivity materials and high-mobility materials are described. We show that placing high dielectric permittivity materials in the gate-drain depletion region can reduce electric field variations by scr...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 66; no. 2; pp. 896 - 900
Main Authors Xia, Zhanbo, Wang, Caiyu, Kalarickal, Nidhin Kurian, Stemmer, Susanne, Rajan, Siddharth
Format Journal Article
LanguageEnglish
Published New York IEEE 01.02.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Charge density
Computer simulation
Depletion
Design engineering
Dielectric superjunction
Dielectrics
Electric breakdown
Electric fields
Field effect transistors
HEMTs
high power density
high-frequency power amplifier
Logic gates
Millimeter waves
MODFETs
Permittivity
Semiconductor devices
simulation
SrTiO₃/BaSnO₃ HFET
State of the art
Terahertz frequencies
Transistors
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Summary:The design and modeling of dielectric superjunction transistors using combinations of ultrahigh permittivity materials and high-mobility materials are described. We show that placing high dielectric permittivity materials in the gate-drain depletion region can reduce electric field variations by screening the field due to depleted charges. This enables simultaneously high sheet charge density and breakdown voltage for scaled field-effect transistors. Using detailed 2-D device simulation of dc and high frequency characteristics, we show that extreme dielectric constant engineering provides unique opportunities for transistor design and has the potential to perform better than state-of-the-art millimeter-wave and terahertz frequency transistors.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2888834