Three-Level Two-Stage Decoupled Active NPC Converter With Si IGBT and SiC MOSFET
This paper presents the operation principle and benefits of a novel power converter topology named three-level two-stage decoupled active neutral point clamped (3L-TDANPC) converter, which is implemented based on a hybrid utilization of silicon (Si) insulated gate bipolar transistors (IGBTs) and sil...
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Published in | IEEE transactions on industry applications Vol. 54; no. 6; pp. 6169 - 6178 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.11.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | This paper presents the operation principle and benefits of a novel power converter topology named three-level two-stage decoupled active neutral point clamped (3L-TDANPC) converter, which is implemented based on a hybrid utilization of silicon (Si) insulated gate bipolar transistors (IGBTs) and silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (mosfets). The 3L-TDANPC converter can achieve high efficiency with limited number of SiC mosfet modules while keeping balanced loss distribution among the switching devices, which helps increase the converter power ratings. In addition, in this 3L-TDANPC converter, the SiC mosfet has a potential to ride through short-circuit fault because of the presence of Si IGBTs. The key challenges that are associated with system resonant current are investigated and the methods to damp such resonant current are proposed and explained in detail. The simulation and experimental results based on a 1-MW 3L-TDANPC converter prototype confirm the expected benefits of this proposed converter and the effectiveness of the proposed resonant current damping methods. |
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ISSN: | 0093-9994 1939-9367 |
DOI: | 10.1109/TIA.2018.2851561 |