TSEE from MgO Single Crystal Physically Processed

Thermally stimulated exoelectron emission (TSEE) was studied for MgO single crystals. First, the TSEE response was measured for annealed or quenched samples. Some samples were ion-implanted by H + , He + or Al + ; then, after thermal annealing, the TSEE showed an increase relative to the non-implant...

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Published inJapanese Journal of Applied Physics Vol. 24; no. S4; pp. 238 - 241
Main Authors Fernando, Jose, Chubachi, Diniz, Kakiage, Toru, Kawamoto, Jun-ichi, Nakasaku, Satoshi, Yamamoto, Takayoshi, Kawanishi, Masaharu, Watanabe, Shigeo
Format Journal Article
LanguageEnglish
Published 01.01.1985
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Summary:Thermally stimulated exoelectron emission (TSEE) was studied for MgO single crystals. First, the TSEE response was measured for annealed or quenched samples. Some samples were ion-implanted by H + , He + or Al + ; then, after thermal annealing, the TSEE showed an increase relative to the non-implanted samples. This process was dependent on the element, energy and implanted dose. After a few reading cycles the TSEE of the ion-implanted samples started to decrease. However, upon re-annealing it increased once more. This showed that a fraction of the newly produced centers could be stabilized using a proper, yet still unknown, thermal treatment.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.24S4.238