Hybrid Design Using Metal-Oxide- Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications

• Published in: IEEE transactions on electron devices Vol. 68; no. 2; pp. 846 - 852
• Main Authors: Han, Kaizhen, Sun, Chen, Kong, Eugene Yu Jin, Wu, Ying, Heng, Chun-Huat, Gong, Xiao
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.02.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Analog circuits; Capacitance; Circuit design; Converters; Equivalent circuits; Field effect transistors; field-effect transistors (FETs); Hybrid circuits; Integrated circuit modeling; Iron; Metal oxide semiconductors; MOSFET circuits; MOSFETs; negative capacitance; Rejection; Resistance; Semiconductor devices; Transistors
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2020.3043207

In this work, novel hybrid circuits based on metal-oxide-semiconductor field-effect transistors (MOSFETs) and negative-capacitance field-effect transistors (NC-FETs) were proposed for analog circuit applications, including hybrid operational transconductor amplifier (OTA) and hybrid single-ended to the differential converter. We focus on the design innovation to take advantage of the effect of negative differential resistance (NDR) in NC-FETs. It was found that a significant increase in the output resistance (<inline-formula> <tex-math notation="LaTeX">{R} _{out} </tex-math></inline-formula>) of an OTA can be achieved. Therefore, by setting the quiescent operating point of an OTA in the NDR region of NC-FETs, remarkable improvement in the open-loop gain (<inline-formula> <tex-math notation="LaTeX">{A} _{OL} </tex-math></inline-formula>), the power supply rejection ratio (PSRR), and the common-mode rejection ratio (CMRR) can be achieved in the proposed hybrid OTA compared with the conventional deep submicron MOSFET-based design. In addition, the hybrid MOSFET-NCFET-based design shows great potential in achieving a highly symmetric differential signal. By employing the NDR effect into the design of a single-ended to differential converter, more symmetric output differential signals can be realized compared with the conventional design. Our findings open new doors for further exploration of hybrid MOSFETs and NC-FETs design in analog circuit applications.