An Electrical Model for Trap Coupling Effects on Random Telegraph Noise

• Published in: IEEE electron device letters Vol. 41; no. 10; pp. 1596 - 1599
• Main Authors: Becker, Thales, Li, Xuehua, Alves, Pedro, Wang, Tao, Zhu, Kaichen, Xiao, Yiping, Wirth, Gilson, Lanza, Mario
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.10.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Boron nitride; charge trapping; Coupling; Information storage; random telegraph noise; resistive coupling model; Resistive switching; Titanium dioxide

Resistive switching (RS) devices are being studied exhaustively for multiple applications such as information storage and bio-inspired computing, but some reliability problems are still hindering their massive use. Among them, random telegraph noise (RTN) is one of the phenomena that still needs to...