An Electrical Model for Trap Coupling Effects on Random Telegraph Noise

Resistive switching (RS) devices are being studied exhaustively for multiple applications such as information storage and bio-inspired computing, but some reliability problems are still hindering their massive use. Among them, random telegraph noise (RTN) is one of the phenomena that still needs to...

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Bibliographic Details
Published inIEEE electron device letters Vol. 41; no. 10; pp. 1596 - 1599
Main Authors Becker, Thales, Li, Xuehua, Alves, Pedro, Wang, Tao, Zhu, Kaichen, Xiao, Yiping, Wirth, Gilson, Lanza, Mario
Format Journal Article
LanguageEnglish
Published New York IEEE 01.10.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Boron nitride
charge trapping
Coupling
Information storage
random telegraph noise
resistive coupling model
Resistive switching
Titanium dioxide
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Summary:Resistive switching (RS) devices are being studied exhaustively for multiple applications such as information storage and bio-inspired computing, but some reliability problems are still hindering their massive use. Among them, random telegraph noise (RTN) is one of the phenomena that still needs to be understood. In this work, we develop a general model to describe RTN in RS devices by demonstrating the existence of coupling effects between multiple traps, and their effect in the current amplitude deviation. We accurately describe anomalous RTN signals observed in high resistive state (HRS) and low-resistance state (LRS) of RS devices based on TiO 2 and hexagonal boron nitride (h-BN).
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.3015842