Monte Carlo Analysis of Measurement Uncertainties for On-Wafer Multiline TRL Calibration Including Dynamic Accuracy

The multiline thru-reflect-line (TRL) calibration algorithm model is used to determine the error sources and uncertainties for on-wafer S-parameter measurements, and the uncertainty source is presented in a diagrammatic form. The quantitative contribution of each input error source to the S-paramete...

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Bibliographic Details
Published inIEEE transactions on instrumentation and measurement Vol. 69; no. 11; pp. 8874 - 8880
Main Authors Luan, Peng, Wang, Yibang, Zhao, Wei, Liu, Chen, Liang, Faguo, Wu, Aihua, Du, Jing
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Accuracy
Algorithms
Batteries
Calibration
Data models
Degradation
dynamic accuracy
Error analysis
Estimation
Mathematical model
Monte Carlo simulation
multiline thru-reflect-line (TRL)
on-wafer S-parameter
Parameter uncertainty
Predictive models
Reflectance
Reflection
Reliability
uncertainty
Uncertainty analysis
vector network analyzer (VNA)
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Summary:The multiline thru-reflect-line (TRL) calibration algorithm model is used to determine the error sources and uncertainties for on-wafer S-parameter measurements, and the uncertainty source is presented in a diagrammatic form. The quantitative contribution of each input error source to the S-parameter of the device under test (DUT) is obtained through the Monte Carlo method. Through analysis, it is found that the dynamic accuracy of the vector receiver as an ignored source of uncertainty makes a significant contribution to the amplitude of transmission coefficients and large reflection coefficient of the on-wafer S-parameters. Finally, the influence of dynamic accuracy measurement error on the DUT with different reflection coefficients is studied.
ISSN:0018-9456
1557-9662
DOI:10.1109/TIM.2020.2995970