Interface-induced negative differential resistance and memristive behavior in Gr/MoSe2 heterostructure

• Published in: Journal of materials science. Materials in electronics Vol. 33; no. 9; pp. 6403 - 6410
• Main Authors: Bastani, Parnia, Mohseni, Seyed Majid, Jamilpanah, Loghman, Azizi, Behnam, Gharehbagh, Javad Shoa e
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.03.2022
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Materials Science; Optical and Electronic Materials
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-022-07812-x

Heterostructures of materials can possess the prominent characteristics of their individual layers or gain newly emerged interface effects between the layers. Interface effects gain utmost importance in two-dimensional (2D) heterostructures due to the comparable bulk to the interface volume. Specifically, the interfacing of the very well-recognized conductive graphene (Gr) 2D material with newly developing semiconductive 2D materials is a rich field to be investigated for electronic applications. Here, we present the growth of Gr/MoSe 2 heterostructure with emerged memristance and negative differential resistance (NDR) effect. Bare Gr and bare MoSe 2 layers showed no memristance and NDR response, but when stacked in a vertical structure, they showed memristive and NDR behavior in the I-V response, thanks to the interface-induced effects. The layers are fabricated via the chemical vapor deposition method at cm scales, showing viability for real device applications. We discuss both ionic and electronic effects and show that the electronic effects govern the observed NDR effects and memristance can be attributed to electronic and/or ionic effects. The observed interface-induced rich electronic phenomena may be considered for the future development of 2D materials-based electronic devices.