750 nm 1.5 W frequency-doubled semiconductor disk laser with a 44 nm tuning range

We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wavelength of the doubled emission could be tune...

Full description

Saved in:
Bibliographic Details
Published inOptics letters Vol. 40; no. 19; p. 4380
Main Authors Saarinen, Esa J, Lyytikäinen, Jari, Ranta, Sanna, Rantamäki, Antti, Sirbu, Alexei, Iakovlev, Vladimir, Kapon, Eli, Okhotnikov, Oleg G
Format Journal Article
LanguageEnglish
Published United States 01.10.2015
Subjects
Lasers
Optical Phenomena
Semiconductors
Online AccessGet more information

Cover

More Information
Summary:We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wavelength of the doubled emission could be tuned from 720 to 764 nm with an intracavity birefringent plate. The beam quality parameter M of the laser output was measured to be below 1.5 at all pump powers. The laser is a promising tool for biomedical applications that can take advantage of the large penetration depth of light in tissue in the 700-800 nm spectral range.
ISSN:1539-4794
DOI:10.1364/OL.40.004380