Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

In this work, the suppression of hydrogen diffusion in top-gate InGaZnO thin film transistors (TFTs) was observed. Under positive-bias temperature stress, the threshold voltage in short-channel devices was negatively shifted; this shift was attributed to hydrogen diffusion. To inhibit hydrogen migra...

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Bibliographic Details
Published inIEEE electron device letters Vol. 42; no. 11; pp. 1611 - 1614
Main Authors Chien, Ya-Ting, Tsai, Yu-Lin, Zhou, Kuan-Ju, Zheng, Yu-Zhe, Tai, Mao-Chou, Tu, Hong-Yi, Kuo, Chuan-Wei, Chang, Ting-Chang, Tsai, Tsung-Ming
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Diffusion
Electronegativity
Energy bands
Fluorine
Hydrogen
Hydrogen diffusion
Indium gallium zinc oxide
indium–gallium–zinc oxide (IGZO)
instability mechanism
Logic gates
Low temperature
low-temperature high-pressure treatment
Performance enhancement
Performance evaluation
Reliability
Semiconductor devices
Stress
Supercritical fluids
Thin film transistors
Thin films
Threshold voltage
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Summary:In this work, the suppression of hydrogen diffusion in top-gate InGaZnO thin film transistors (TFTs) was observed. Under positive-bias temperature stress, the threshold voltage in short-channel devices was negatively shifted; this shift was attributed to hydrogen diffusion. To inhibit hydrogen migration, low-temperature high-pressure (LTHP) fluorine treatment was subsequently utilized. Under supercritical fluid states, fluorine, the most electronegative species of all elements, acted as a reactant and reduced mobile hydrogen. It was confirmed that the treatment benefited the characteristic properties of InGaZnO TFTs with varied channel lengths, especially in devices with short channels. The reliability of devices under stress improved through the LTHP treatment; the effects of suppression of hydrogen diffusion were illustrated by the energy band and capacitance-voltage curves of devices. Energy-dispersive X-ray spectroscopy of the specimen treated with LTHP indicated the presence of fluorine, which ensured the contribution of the treatment. Thus, LTHP treatment enables the realization of small-sized high-performance top-gate InGaZnO TFTs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3116168