Formation and Effect of Thermal Annealing for Low-Resistance Ni/Au Ohmic Contact to Phosphorous-Doped p-Type ZnO

We report on a Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the phosphorus-doped p-type ZnO with a hole concentration of 1.0 X 1018 cm-3. As-deposited Ni/Au contacts to p-type ZnO showed a specific contact resistance of 7.67 X 10-3 a cm2 by forming Ni-Zn phase to i...

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Published inJournal of the Electrochemical Society Vol. 152; no. 3; pp. G179 - G181
Main Authors Lim, Jae-Hong, Kim, Kyoung-Kook, Hwang, Dae-Kue, Kim, Hyun-Sik, Oh, Jin-Yong, Park, Seong-Ju
Format Journal Article
LanguageEnglish
Published 01.01.2005
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Summary:We report on a Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the phosphorus-doped p-type ZnO with a hole concentration of 1.0 X 1018 cm-3. As-deposited Ni/Au contacts to p-type ZnO showed a specific contact resistance of 7.67 X 10-3 a cm2 by forming Ni-Zn phase to increase the hole concentration near the ZnO surface. The specific contact resistance was decreased with increasing the thermal annealing temperature. When the Ni/Au contact was annealed at 600DGC for 30 s in an air ambient, the specific contact resistance was greatly decreased to 1.72 X 10-4 Omega cm2. The improved ohmic property was attributed to an increase in the hole concentration by the formation of Ni-Zn and Au-Zn phases due to the outdiffusion of Zn during the thermal annealing process.
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ISSN:0013-4651
DOI:10.1149/1.1855832