ELECTRICAL PROPERTIES OF CdxSe1-x FILMS AT DIFFERENT THICKNESS AND ANNEALING TEMPERATURES
CdxSe1-xalloy has been prepared successfully. The prepared alloy were used to produce CdxSe1-x films. CdxSe1-x films with different thickness (0.5, 1, 1.5, 2)μm have been prepared by thermal evaporation on glass substrates. The deposited films have been annealed at different temperatures (373, 423 a...
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Published in | Digest Journal of Nanomaterials and Biostructures Vol. 15; no. 1; pp. 143 - 156 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.01.2020
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Online Access | Get full text |
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Summary: | CdxSe1-xalloy has been prepared successfully. The prepared alloy were used to produce CdxSe1-x films. CdxSe1-x films with different thickness (0.5, 1, 1.5, 2)μm have been prepared by thermal evaporation on glass substrates. The deposited films have been annealed at different temperatures (373, 423 and 473)K. From studying the electrical properties of CdxSe1-xfilms deposited on glass with different thickness and annealing temperature, we found that D.C conductivity increases from 1.511 × 10-5 to 67.6 × 10-5 (Ω.cm)-1 at R.T with thickness increasing (0.5–2)μm and decreases from 1.511 × 10-5 to 1.4×10-7 (Ω.cm)-1 with increasing of annealing temperatures (R.T–473)K for 0.5μm thick. There are two activation energies for D.C conductivity Ea1 and Ea2 decrease from 0.151 to 0.107 eV and from 0.446 to 0.188 eV at R.T, respectively, with increasing of thickness form 0.5 to 2μm. Ea1 and Ea2 increase from 0.151 to 0.231 eV and from 0.446 to 0.570 eV at 0.5 μm thick, respectively, with increasing of annealing temperatures (R.T–473)K. Hall measurements confirmed that all the intrinsic films are n-type, carriers concentration decreases from 11.16 × 1014 cm-3 to 8.333 × 1014 cm-3 at R.T with increasing of thickness (0.5–2)μm, and decrease form 1.116 × 1015 cm-3 to 0.096 × 1014 cm-3 for 0.5μm thick with increasing of annealing temperatures (R.T– 473)K. The mobility is found to increase with increasing of thickness and annealing temperatures. The drift velocity (Vd), carrier lifetime () and mean free path (ℓ) increase with increasing of annealing temperatures and thickness.A.C conductivity measurements for CdxSe1-xfilms with different thickness and annealing temperatures consistent with correlated barrier hopping model (CBH). |
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ISSN: | 1842-3582 1842-3582 |
DOI: | 10.15251/DJNB.2020.151.143 |