The Reverse Lateral Photovoltaic Effect in Boron-Diffused Si p-n Junction Structure

Lateral photovoltaic effect (LPE) in boron-diffused Si p-n junction has been first studied by using different laser sources with wavelength ranging from visible to infrared. Our results suggest that the LPEs of both sides increased with laser wavelength and the lateral photovoltage (LPV) exhibited t...

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Bibliographic Details
Published inIEEE electron device letters Vol. 37; no. 2; pp. 201 - 204
Main Authors Qiao, Shuang, Liu, Yanan, Liu, Jihong, Chen, Jianhui, Wang, Shufang, Fu, Guangsheng
Format Journal Article
LanguageEnglish
Published New York IEEE 01.02.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Charge carrier processes
Indium tin oxide
Optical detectors
P-n junctions
Photovoltaic effects
Semiconductor materials
Sensitivity
Silicon
Semiconductor materials
silicon
optical detectors
photovoltaic effects
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Summary:Lateral photovoltaic effect (LPE) in boron-diffused Si p-n junction has been first studied by using different laser sources with wavelength ranging from visible to infrared. Our results suggest that the LPEs of both sides increased with laser wavelength and the lateral photovoltage (LPV) exhibited the reverse polarity for p-Si side and n-Si side of the junction. Moreover, the LPV on n-Si side was slightly larger than that on p-Si side when illuminating on the indium-tin oxide side, and the LPVs on p-Si side and n-Si side for illuminating on the p-Si side were accordingly larger than that for illuminating on the n-Si side. Based on the different mobilities of carriers, the recombination of surface defects, and the wavelength-dependent quantum efficiency, these results are well explained.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2508881