Atomistic Modeling of Suspended Carbon Nanotube Field Effect Transistors Under Proton Radiation

We present an atomistic model explaining spontaneous reductions of source-drain current in suspended carbon nanotube field effect transistors (CNT FETs) under proton irradiation. The non-equilibrium Green's function (NEGF) method is used to investigate the local density of states (LDOS) and tra...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 62; no. 6; pp. 2881 - 2887
Main Authors LaGasse, Samuel W., Cress, Cory D., Hughes, Harold L., Ji Ung Lee
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2015
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Carbon nanotube
Carbon nanotubes
field effect transistor (FET)
Field effect transistors
Green's function methods
Ions
Mathematical model
non-equilibrium Green's function (NEGF)
Proton radiation effects
quantum transport
transient effects
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Summary:We present an atomistic model explaining spontaneous reductions of source-drain current in suspended carbon nanotube field effect transistors (CNT FETs) under proton irradiation. The non-equilibrium Green's function (NEGF) method is used to investigate the local density of states (LDOS) and transfer characteristics of the device. Our model suggests that ionized gas species within 20 nm of the CNT FET will act as an electrostatic gate, reducing current in the device for low back-gate voltages.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2015.2478002