Tunnel-Coupled Laser Diode Microarray as a kW-Level 100-ns Pulsed Optical Power Source (λ = 910 nm)

• Published in: IEEE photonics technology letters Vol. 34; no. 1; pp. 35 - 38
• Main Authors: Slipchenko, Sergey O., Podoskin, Aleksandr A., Veselov, Dmitrii A., Strelets, Vladislav A., Rudova, Natalia A., Pikhtin, Nikita A., Bagaev, Timur A., Ladugin, Maxim A., Marmalyuk, Alexander A., Kop'ev, Peter S.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.01.2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Apertures; Current pulses; Heterostructures; Laser array; Laser modes; Lasers; Optical pulses; Optical pumping; Power sources; pulsed semiconductor laser; Pump lasers; Semiconductor laser arrays; Semiconductor lasers; Tunnels; Waveguide lasers
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2021.3134370

Pulsed 910nm laser sources based on tunnel-coupled AlGaAs/InGaAs/GaAs heterostructures have been developed and studied. To provide the maximum brightness and operation in the linear part of the light-current characteristic, a microarray design was developed. This design includes <inline-formula> <tex-math notation="LaTeX">3\times 800 </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula>-wide stripes in the emitting region. It was demonstrated that, under pumping with 760 A/100 ns current pulses, laser pulse with peak power of 1150 W can be generated. Raising the working temperature led to an insignificant deterioration of emission characteristics, which was manifested by the peak powers of 1030 W/750 A/50°C and 905 W/720 A/75°C.