On the influence of active area design on the performance of SiC JBS diodes

This paper presents an investigation regarding the influence of the active area design on the static and dynamic performance of SiC JBS diodes. The analysis has been performed on fabricated JBS diodes, rated for 1.7kV applications. For the active area layout, both stripe and hexagonal cell patterns...

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Bibliographic Details
Published in2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) Vol. 897; p. 1
Main Authors Mihaila, A., Minamisawa, R. A., Knoll, L., Sundaramoorthy, V. K., Bianda, E., Bartolf, H., Alfieri, G., Rahimo, M.
Format Conference Proceeding Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 15.05.2017
Subjects
active area
Diodes
hex design
Hexagonal cells
Insulated gate bipolar transistors
Layout
Robustness
Schottky diodes
SiC JBS diodes
Silicon
Silicon carbide
static behavior
stripe design
turn-off behaviour
SiC JBS Diodes
Hex Design
Turn-Off Behaviour
Static Behavior
Active Area
Stripe Design
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Summary:This paper presents an investigation regarding the influence of the active area design on the static and dynamic performance of SiC JBS diodes. The analysis has been performed on fabricated JBS diodes, rated for 1.7kV applications. For the active area layout, both stripe and hexagonal cell patterns have been used for the implanted p+ regions.
Bibliography:Selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
ISSN:1662-9752
0255-5476
1662-9752
DOI:10.4028/www.scientific.net/MSF.897.471