GaN Technology for E, W and G-Band Applications

Highly scaled GaN T-gate technology offers devices with high f t /f MAX , and low minimum noise figure while still maintaining high breakdown voltage and high linearity typical for GaN technology. In this paper we report an E-band GaN power amplifier (PA) with output power (P out ) of 1.3 W at power...

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Bibliographic Details
Published in2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) pp. 1 - 4
Main Authors Margomenos, A., Kurdoghlian, A., Micovic, M., Shinohara, K., Brown, D. F., Corrion, A. L., Moyer, H. P., Burnham, S., Regan, D. C., Grabar, R. M., McGuire, C., Wetzel, M. D., Bowen, R., Chen, P. S., Tai, H. Y., Schmitz, A., Fung, H., Fung, A., Chow, D. H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2014
Subjects
Gallium nitride
HEMTs
Linearity
MMICs
Performance evaluation
Power amplifiers
Power generation
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Summary:Highly scaled GaN T-gate technology offers devices with high f t /f MAX , and low minimum noise figure while still maintaining high breakdown voltage and high linearity typical for GaN technology. In this paper we report an E-band GaN power amplifier (PA) with output power (P out ) of 1.3 W at power added efficiency (PAE) of 27% and a 65-110 GHz ultra-wideband low noise amplifier (LNA). We also report the first G-band GaN amplifier capable of producing output power density of 296mW/mm at 180 GHz. All these components were realized with a 40 nm T-gate process (f t = 200 GHz, f MAX = 400 GHz, V brk > 40V) which can enable the next generation of transmitter and receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2014.6978559