Broad optical bandwidth InGaAs-InAlGaAs light-emitting diodes fabricated using a laser annealing process

The use of a laser-induced quantum-well intermixing technique in the InGaAs-InAlGaAs material system is presented. We report blue shifts of up to 240 nm in the 1.55-μm emission wavelength, generated by exposure to a Nd:YAG laser. Variations in the optical intensity across the irradiating beam were u...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 11; no. 12; pp. 1557 - 1559
Main Authors McDougall, S.D., Kowalski, O.P., Marsh, J.H., Aitchison, J.S.
Format Journal Article
LanguageEnglish
Published IEEE 01.12.1999
Subjects
Annealing
Bandwidth
Beams (radiation)
Devices
Emission
Lasers
Light emitting diodes
Optical interferometry
Optical materials
Optical sensors
Optical waveguides
Photonic band gap
Quantum well lasers
Quantum wells
Stimulated emission
Wavelengths
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Summary:The use of a laser-induced quantum-well intermixing technique in the InGaAs-InAlGaAs material system is presented. We report blue shifts of up to 240 nm in the 1.55-μm emission wavelength, generated by exposure to a Nd:YAG laser. Variations in the optical intensity across the irradiating beam were used to laterally grade the bandgap along a sample. We used this technique to fabricate broad optical bandwidth, light-emitting diodes. The devices showed an increase in the full width half maximum of the emission spectrum from 125 nm in undisordered devices to over 260 nm in intermixed material. The output spectrum was also observed to be flat-topped (within 5%) across a wavelength range of 140 nm.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.806845